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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) 0 100 P-Channel 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V 2W (Ta)
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Per Unit
$0.186
VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro6™(TSOP-6) 0 3000 P-Channel 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V 2W (Ta)
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Per Unit
$0.060
RFQ
27,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 0.27A SOT523 SOT-523 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-523 0 3000 N-Channel 30V 270mA (Ta) 2 Ohm @ 10mA, 4V 1.5V @ 250µA 0.5nC @ 4.5V 36.3pF @ 5V 2.5V, 4.5V ±20V 280mW (Ta)
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