Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 5.1A FLIPFET 4-FlipFet™ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 4-FlipFet™ 0 6000 P-Channel 20V 5.1A (Ta) 65 mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21nC @ 5V 1230pF @ 15V 2.5V, 4.5V ±12V 2.2W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 5.1A FLIP-FET 4-FlipFet™ HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 4-FlipFet™ 0 6000 P-Channel 20V 5.1A (Ta) 65 mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21nC @ 5V 1230pF @ 15V 2.5V, 4.5V ±12V 2.2W (Ta)
Default Photo
Per Unit
$0.341
RFQ
5,000
In-stock
Diodes Incorporated MOSFET N-CH 200V 1.5A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252-3 0 2500 N-Channel 200V 1.5A (Ta) 750 mOhm @ 2.75A, 10V 2.5V @ 250µA 8.1nC @ 5V 358pF @ 25V 5V, 10V ±20V 2.2W (Ta)
Page 1 / 1