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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
12 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - D2PAK 0 0 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 450 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 400 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 150V 33A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 3200 N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 150V 33A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 200 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Per Unit
$1.564
VIEW
RFQ
Infineon Technologies MOSFET N-CH 150V 33A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 3200 N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Per Unit
$1.464
RFQ
800
In-stock
Infineon Technologies MOSFET N-CH 200V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V 3.8W (Ta), 170W (Tc)
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Per Unit
$1.398
RFQ
2,400
In-stock
Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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