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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 14A PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (3x3) 0 1 N-Channel - 30V 14A (Ta), 40A (Tc) 7.8 mOhm @ 12A, 10V 2.35V @ 25µA 16nC @ 10V 1050pF @ 25V 4.5V, 10V ±20V 2.5W (Ta), 27W (Tc)
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$0.232
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Infineon Technologies MOSFET N-CH 34V 44A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 34V 12A (Ta), 44A (Tc) 9.2 mOhm @ 20A, 10V 2V @ 250µA 15nC @ 10V 1110pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 27W (Tc)
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