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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.269
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RFQ
Infineon Technologies MOSFET N-CH 80V 23A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 80V 7A (Ta), 23A (Tc) 34 mOhm @ 12A, 10V 3.5V @ 12µA 9.1nC @ 10V 756pF @ 40V 6V, 10V ±20V 2.5W (Ta), 32W (Tc)
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Per Unit
$0.304
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Infineon Technologies MOSFET N-CH 30V 48A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 13A (Ta), 48A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 250µA 18nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 32W (Tc)
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Per Unit
$0.269
RFQ
5,000
In-stock
Infineon Technologies MOSFET N-CH 30V 48A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 12A (Ta), 48A (Tc) 9 mOhm @ 30A, 10V 2V @ 250µA 24nC @ 10V 1900pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 32W (Tc)
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