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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.461
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RFQ
Infineon Technologies MOSFET N-CH 80V 12.5A 6PQFN 6-VDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel 80V 12.5A (Tc) 32 mOhm @ 7.5A, 10V 2V @ 10µA 7nC @ 4.5V 540pF @ 25V 4.5V, 10V ±20V 11.5W (Tc)
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Per Unit
$0.464
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Infineon Technologies MOSFET N-CH 100V 6PQFN 6-VDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V 11.5W (Tc)
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Per Unit
$0.437
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RFQ
Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN 6-VDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V 11.5W (Tc)
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