- Packaging :
- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 105 mOhm @ 3.4A, 10V (7)
- 110 mOhm @ 9.6A, 10V (11)
- 140 mOhm @ 2A, 10V (3)
- 160 mOhm @ 1.9A, 10V (3)
- 175 mOhm @ 6.6A, 10V (6)
- 20 mOhm @ 42A, 10V (2)
- 33 mOhm @ 2.6A, 10V (1)
- 35 mOhm @ 2.5A, 10V (1)
- 40 mOhm @ 3.8A, 10V (4)
- 45 mOhm @ 3.7A, 10V (4)
- 50 mOhm @ 4.7A, 10V (6)
- 57.5 mOhm @ 3.1A, 10V (2)
- 60 mOhm @ 3A, 10V (4)
- 65 mOhm @ 3.1A, 10V (3)
- 650 mOhm @ 270mA, 10V (3)
- 75 mOhm @ 2.8A, 10V (5)
- 90 mOhm @ 1.4A, 10V (1)
- Vgs(th) (Max) @ Id :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
66 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 525 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 2000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 | TO-236-3, SC-59, SOT-23-3 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-23-3 | 0 | 3000 | N-Channel | - | 55V | 540mA (Ta) | 650 mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | 360mW (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 675 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5A SOT-223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2000 | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | - | 55V | 2.8A (Ta) | 90 mOhm @ 1.4A, 10V | 2V @ 12µA | 10nC @ 10V | 330pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5.2A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 4000 | N-Channel | - | 55V | 5.2A (Ta) | 33 mOhm @ 2.6A, 10V | 2V @ 50µA | 42nC @ 10V | 1390pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||||
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GET PRICE |
7,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2320 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 2080 | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1840 | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 800 | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | ||||
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56,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 | TO-236-3, SC-59, SOT-23-3 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-23-3 | 0 | 3000 | N-Channel | - | 55V | 540mA (Ta) | 650 mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | 4.5V, 10V | ±20V | 360mW (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 3000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 525 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | 1W (Ta) |
