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- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -50°C ~ 150°C (TJ) | DPAK | 0 | 3000 | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | 63W (Tc) | |||||
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9,700
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -50°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | 63W (Tc) | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 200V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STripFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -50°C ~ 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 200V | 75A (Tc) | 34 mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | 3260pF @ 25V | 10V | ±20V | 190W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 20V 3A 6TSOP | SOT-23-6 Thin, TSOT-23-6 | - | Tape & Reel (TR) | Surface Mount | -50°C ~ 150°C (TJ) | Active | 6-TSOP | 0 | 3000 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 20V | 3A | 70 mOhm @ 3.5A, 4.5V | 1.5V @ 250µA | 3.8nC @ 4.5V | 300pF @ 10V |
