- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 75V 80A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 75V | 80A (Tc) | 11 mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | 3700pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 150V DIRECTFET L8 | DirectFET™ Isometric L8 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET L8 | 0 | 4000 | N-Channel | - | 150V | 375A (Tc) | 11 mOhm @ 40A, 10V | 5V @ 250µA | 150nC @ 10V | 6660pF @ 25V | 10V | ±20V | 3.3W (Ta), 125W (Tc) |
