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- Current - Continuous Drain (Id) @ 25°C :
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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 33A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 150V | 33A (Tc) | 42 mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | 10V | ±20V | 144W (Tc) | ||||
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10,000
In-stock
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onsemi | MOSFET N-CH 200V 7.8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | N-Channel | - | 200V | 7.8A (Tc) | 360 mOhm @ 3.9A, 10V | 4V @ 250µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 50W (Tc) |