- Packaging :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | 55W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 57A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1200 | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 81A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1125 | N-Channel | - | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | 63W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 900 | N-Channel | - | 30V | 65A (Tc) | 8.4 mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | 65W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 6000 | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | 55W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 58A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | 55W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 57A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 25V | 57A (Tc) | 8.7 mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 900pF @ 13V | 4.5V, 10V | ±20V | 48W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 30V | 65A (Tc) | 8.4 mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | 65W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 25V 81A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 25V | 81A (Tc) | 5.7 mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | 4.5V, 10V | ±20V | 63W (Tc) |
