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- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FDmesh™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 600V | 29A (Tc) | 110 mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | 2785pF @ 50V | 10V | ±25V | 190W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, FDmesh™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 600V | 29A (Tc) | 110 mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | 2785pF @ 50V | 10V | ±25V | 190W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, MDmesh™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 600V | 29A (Tc) | 105 mOhm @ 14.5A, 10V | 4V @ 250µA | 83.6nC @ 10V | 2722pF @ 100V | 10V | ±25V | 210W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MDmesh™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 600V | 29A (Tc) | 105 mOhm @ 14.5A, 10V | 4V @ 250µA | 84nC @ 10V | 2722pF @ 100V | 10V | ±25V | 250W (Tc) | ||||
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1,600
In-stock
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Infineon Technologies | MOSFET N-CH 55V 29A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) |