- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | 294W (Tc) | |||
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In-stock
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Infineon Technologies | MOSFET NCH 300V 19A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1 | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | 210W (Tc) |
