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Supplier Device Package :
FET Feature :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.641
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RFQ
Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 0 5000 N-Channel   - 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V 2.1W (Ta), 63W (Tc)
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Per Unit
$0.513
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Diodes Incorporated MOSFETDUAL N-CHANPOWERDI5060-8 8-PowerTDFN Automotive, AEC-Q101 Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active POWERDI5060-8 0 0 2500 2 N-Channel (Dual) 2.6W (Ta) Standard 40V 11.1A (Ta), 42A (Tc) 15 mOhm @ 20A, 10V 4V @ 250µA 10.6nC @ 10V 805pF @ 20V      
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Per Unit
$0.359
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Diodes Incorporated MOSFETDUAL N-CHAN 40VPOWERDI5060 8-PowerTDFN Automotive, AEC-Q101 Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active POWERDI5060-8 5000 0 2500 2 N-Channel (Dual) 2.6W (Ta) Standard 40V 11.1A (Ta), 42A (Tc) 15 mOhm @ 20A, 10V 4V @ 250µA 10.6nC @ 10V 805pF @ 20V      
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