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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.359
RFQ
2,500
In-stock
Diodes Incorporated MOSFET N-CH 60V 3.7A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOP 40000 0 2500 N-Channel   - 60V 3.7A (Ta) 66 mOhm @ 4.5A, 10V 3V @ 250µA 10.3nC @ 10V 502pF @ 30V 4.5V, 10V ±20V 1.56W (Ta)
Default Photo
Per Unit
$0.383
RFQ
2,500
In-stock
Diodes Incorporated MOSFET N/P-CH 40V 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 40000 0 2500 N and P-Channel 1.8W Logic Level Gate 40V 6.5A, 4.8A 28 mOhm @ 6A, 10V 3V @ 250µA 12.9nC @ 10V 604pF @ 20V      
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