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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.963
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RFQ
Infineon Technologies MOSFET N-CH 250V 35A DIRECTFET DirectFET™ Isometric L8 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DIRECTFET L8 0 4000 N-Channel - 250V 375A (Tc) 38 mOhm @ 21A, 10V 5V @ 250µA 165nC @ 10V 6714pF @ 25V 10V ±30V 4.3W (Ta), 125W (Tc)
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Per Unit
$0.819
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Infineon Technologies MOSFET N-CH 60V 23A 6-PQFN 8-PowerVDFN StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PQFN (5x6) 0 4000 N-Channel - 60V 100A (Tc) 3.2 mOhm @ 75A, 10V 3.7V @ 150µA 165nC @ 10V 6460pF @ 25V 6V, 10V ±20V 156W (Tc)
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Infineon Technologies MOSFET N-CH 250V DIRECTFET L8 DirectFET™ Isometric L8 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete DIRECTFET L8 0 4000 N-Channel - 250V 375A (Tc) 38 mOhm @ 21A, 10V 5V @ 250µA 165nC @ 10V 6714pF @ 25V 10V ±30V 4.3W (Ta), 125W (Tc)
IRF9310TRPBF
Per Unit
$0.610
RFQ
16,000
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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