- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 1.7A MICRO-8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1680 | P-Channel | Schottky Diode (Isolated) | 20V | 1.7A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 2.7V, 4.5V | ±12V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1680 | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | 1W (Ta) |
