- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252-3 | 7500 | 0 | 2500 | N-Channel | - | 100V | 5A (Ta) | 85 mOhm @ 4.6A, 10V | 4V @ 250µA | 26nC @ 10V | 1313pF @ 50V | 6V, 10V | ±20V | 2.15W (Ta) | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 4.2A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252-3 | 7500 | 0 | 2500 | N-Channel | - | 100V | 4.2A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17.16nC @ 10V | 859pF @ 50V | 6V, 10V | ±20V | 2.11W (Ta) | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252 | 7500 | 0 | 2500 | N-Channel | - | 60V | 13.3A (Ta), 57A (Tc) | 10 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±16V | 2.6W (Ta) | ||||
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17,500
In-stock
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onsemi | MOSFET N-CH 60V 6.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 7500 | 0 | 2500 | N-Channel | - | 60V | 6.1A (Ta) | 35 mOhm @ 6.1A, 10V | 3V @ 250µA | 27nC @ 10V | 1310pF @ 30V | 4.5V, 10V | ±20V | 5W (Ta) | ||||
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20,000
In-stock
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onsemi | MOSFET N-CH 30V 13A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 7500 | 0 | 2500 | N-Channel | - | 30V | 13A (Ta) | 8 mOhm @ 13A, 10V | 3V @ 250µA | 30nC @ 5V | 2220pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Diodes Incorporated | MOSFET 2 P-CH 26A POWERDI5060-8 | 8-PowerTDFN | Automotive, AEC-Q101 | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | POWERDI5060-8 | 7500 | 0 | 2500 | 2 P-Channel (Dual) | - | Standard | - | 26A (Tc) | 48 mOhm @ 5A, 10V | 3V @ 250µA | 14.5nC @ 4.5V | 1525pF @ 30V | |||||||
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VIEW | Diodes Incorporated | MOSFET 2N-CH 40V 7A 8SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 7500 | 0 | 2500 | 2 N-Channel (Dual) | 1.3W | Logic Level Gate | 40V | 7A | 24 mOhm @ 6A, 10V | 3V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | |||||||
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VIEW | Diodes Incorporated | MOSFET 2 N-CHANNEL 7.5A 8SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-SO | 7500 | 0 | 2500 | 2 N-Channel (Dual) | - | Standard | - | 7.5A (Ta) | 24 mOhm @ 6A, 10V | 3V @ 250µA | 8.8nC @ 4.5V | 1060pF @ 20V | |||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N/P-CH 30V TO252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252-4L | 7500 | 0 | 2500 | N and P-Channel, Common Drain | 2.7W | Logic Level Gate | 30V | 9.4A, 6.8A | 21 mOhm @ 7A, 10V | 2.1V @ 250µA | 17.4nC @ 10V | 751pF @ 10V | |||||||
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30,000
In-stock
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onsemi | MOSFET 2N-CH 20V 6.5A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 7500 | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 20V | 6.5A | 30 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | 650pF @ 10V |
