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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 15A PQFN56 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) Single Die 0 1200 N-Channel - 30V 15A (Ta), 34A (Tc) 8.5 mOhm @ 15A, 10V 2.35V @ 25µA 14nC @ 4.5V 1210pF @ 15V 4.5V, 10V ±20V 3.1W (Ta)
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Infineon Technologies MOSFET N-CH 30V 12A PQFN33 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (3x3) 0 1200 N-Channel - 30V 12A (Ta), 29A (Tc) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 4.5V, 10V ±20V 2.8W (Ta)
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