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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 500V 3.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 375 | N-Channel | - | 500V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | 810pF @ 25V | 10V | ±20V | 78W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 375 | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 14A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 375 | N-Channel | - | 250V | 14A (Tc) | 260 mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | 810pF @ 25V | 10V | ±30V | 144W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 16A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 375 | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D-PAK | 0 | 375 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | - | - | 110W (Tc) | ||||
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VIEW | Texas instruments | MOSFET P-CH 15V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 375 | P-Channel | - | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 2.7V, 10V | +2V, -15V | 791mW (Ta) | ||||
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VIEW | Texas instruments | MOSFET 2P-CH 15V 1.17A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 375 | 2 P-Channel (Dual) | 840mW | Logic Level Gate | 15V | 1.17A | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - |
