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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 1.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 150V 1.9A (Ta) 280 mOhm @ 1.14A, 10V 5.5V @ 250µA 15nC @ 10V 330pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 30V 14A (Ta) 8 mOhm @ 14A, 16V 4V @ 250µA 59nC @ 10V 2410pF @ 15V 10V, 16V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 4.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 100V 4.5A (Ta) 60 mOhm @ 2.7A, 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V 2.5W (Ta)
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