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Supplier Device Package :
Minimum Quantity :
Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Infineon Technologies MOSFET N/P-CH 25V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N and P-Channel 2W Standard 25V 3.5A, 2.3A 100 mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V
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onsemi MOSFET N/P-CH 20V 3A/2.8A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 2500 N and P-Channel 900mW Logic Level Gate 20V 3A, 2.8A 125 mOhm @ 3A, 10V - 27nC @ 10V 525pF @ 10V
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onsemi MOSFET N+P 20V 2.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount - Obsolete 8-SOIC 0 2500 N and P-Channel 900mW Logic Level Gate 20V 3A, 2.5A 125 mOhm @ 1A, 10V - 27nC @ 10V 525pF @ 10V
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Per Unit
$0.870
RFQ
3,691
In-stock
Infineon Technologies MOSFET N/P-CH 25V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N and P-Channel 2W Standard 25V 3.5A, 2.3A 100 mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V
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Per Unit
$0.326
RFQ
4,000
In-stock
Infineon Technologies MOSFET N/P-CH 25V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N and P-Channel 2W Standard 25V 3.5A, 2.3A 100 mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V
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