- Manufacture :
- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 84A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PQFN (5x6) | 0 | 4000 | N-Channel | - | 40V | 84A (Tc) | 4.6 mOhm @ 50A, 10V | 3.9V @ 50µA | 66nC @ 10V | 2170pF @ 25V | 10V | ±20V | 4.2W (Ta), 63W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 100V | 17A (Ta), 100A (Tc) | 4.6 mOhm @ 50A, 10V | 3.5V @ 120µA | 63nC @ 10V | 4500pF @ 50V | 6V, 10V | ±20V | 156W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 4.6 mOhm @ 50A, 10V | 4V @ 250µA | 150nC @ 10V | 5100pF @ 25V | 10V | ±20V | 300W (Tc) |
