Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V 190A D2PAK-7P TO-263-7, D²Pak (6 Leads + Tab) Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 0 150 N-Channel - 100V 190A (Tc) 3.9 mOhm @ 110A, 10V 2.5V @ 250µA 140nC @ 4.5V 11490pF @ 50V 4.5V, 10V ±16V 370W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 160A D2PAK-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 0 150 N-Channel - 55V 160A (Tc) 2.6 mOhm @ 140A, 10V 4V @ 250µA 200nC @ 10V 7820pF @ 25V 10V ±20V 300W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 0 150 N-Channel - 55V 160A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V 300W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 240A D2PAK TO-263-7, D²Pak (6 Leads + Tab), TO-263CB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 0 150 N-Channel - 60V 240A (Tc) 1.9 mOhm @ 180A, 10V 2.5V @ 250µA 160nC @ 4.5V 11270pF @ 50V 4.5V, 10V ±16V 380W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 160A TO-263-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK (7-Lead) 0 0 150 N-Channel - 55V 160A (Tc) 2.6 mOhm @ 140A, 10V 4V @ 250µA 200nC @ 10V 7820pF @ 25V 10V ±20V 300W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 160A D2PAK7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK (7-Lead) 0 0 150 N-Channel - 75V 160A (Tc) 3.8 mOhm @ 110A, 10V 4V @ 250µA 260nC @ 10V 7580pF @ 25V 10V ±20V 300W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 75A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 0 150 N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V 330W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 162A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 0 150 N-Channel - 40V 162A (Tc) 4 mOhm @ 95A, 10V 4V @ 250µA 200nC @ 10V 7360pF @ 25V 10V ±20V 3.8W (Ta), 200W (Tc)
Default Photo
Per Unit
$4.351
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 240A D2PAK TO-262-3 Wide Leads HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active TO-262-3 Wide 0 0 150 N-Channel - 40V 240A (Tc) 1.4 mOhm @ 195A, 10V 4V @ 250µA 210nC @ 10V 9450pF @ 32V 10V ±20V 375W (Tc)
Default Photo
Per Unit
$4.296
VIEW
RFQ
Texas instruments IC MOSFET N-CH 80V TO-220 TO-263-4, D²Pak (3 Leads + Tab), TO-263AA NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DDPAK/TO-263-3 600 0 150 N-Channel - 80V 200A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V 375W (Tc)
Page 1 / 1