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102 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 30V 9.8A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 9.8A (Ta) 12.1 mOhm @ 7.8A, 20V 2.4V @ 25µA 14nC @ 4.5V 1270pF @ 25V 10V, 20V ±25V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 9.8A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 9.8A (Ta) 17.5 mOhm @ 9.8A, 10V 2.4V @ 25µA 41nC @ 10V 1270pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 150V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 525 P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V 110W (Tc)
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Infineon Technologies MOSFET P-CH 55V 18A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 525 P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET P-CH 12V 16A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 P-Channel - 12V 16A (Ta) 7 mOhm @ 16A, 4.5V 900mV @ 250µA 91nC @ 4.5V 8676pF @ 10V 1.8V, 4.5V ±8V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 30V 9.2A (Ta) 13.3 mOhm @ 9.2A, 20V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 10V, 20V ±25V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 12A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 30V 12A (Ta) 8.5 mOhm @ 12A, 20V 2.4V @ 25µA 52nC @ 10V 1680pF @ 25V 10V, 20V ±25V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 5.4A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 30V 5.4A (Ta) 59 mOhm @ 5.4A, 10V 2.4V @ 10µA 14nC @ 10V 386pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 12A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 12A (Tc) 11.9 mOhm @ 12A, 10V 2.4V @ 25µA 52nC @ 10V 1680pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 15A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 15A (Ta) 7.2 mOhm @ 15A, 10V 2.4V @ 50µA 98nC @ 10V 2590pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 16A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 30V 16A (Ta) 6.6 mOhm @ 16A, 10V 2.4V @ 50µA 92nC @ 10V 2820pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 150V 27A D2-PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - D2PAK 0 0 P-Channel - 150V 27A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 110nC @ 10V 2210pF @ 25V 10V ±20V 250W (Tc)
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Infineon Technologies MOSFET P-CH 30V 2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1440 P-Channel Schottky Diode (Isolated) 30V 2A (Ta) 200 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 4.5V, 10V ±20V 1.25W (Ta)
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Infineon Technologies MOSFET P-CH 12V 16A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 665 P-Channel - 12V 16A (Ta) 7 mOhm @ 16A, 4.5V 600mV @ 500µA 212nC @ 5V 17179pF @ 10V 2.5V, 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 20V 15A (Ta) 8.2 mOhm @ 15A, 4.5V 1.2V @ 250µA 130nC @ 4.5V 7980pF @ 15V 2.5V, 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 150V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 150V 2.2A (Ta) 240 mOhm @ 1.3A, 10V 5V @ 250µA 49nC @ 10V 1280pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 100V 6.8A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 700 P-Channel - 100V 6.8A (Tc) 480 mOhm @ 4A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 3.8W (Ta), 48W (Tc)
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Infineon Technologies MOSFET P-CH 55V 12A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1 P-Channel - 55V 12A (Tc) 175 mOhm @ 7.2A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V 3.8W (Ta), 45W (Tc)
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Infineon Technologies MOSFET P-CH 55V 20A DPAK TO-252-4, DPak (3 Leads + Tab) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete I-PAK (LF701) 0 750 P-Channel - 55V 20A (Tc) 105 mOhm @ 3.4A, 10V 1V @ 250µA 47nC @ 10V 660pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET P-CH 20V 1.7A MICRO-8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1680 P-Channel Schottky Diode (Isolated) 20V 1.7A (Ta) 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V 2.7V, 4.5V ±12V 1.25W (Ta)
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Infineon Technologies MOSFET P-CH 55V 18A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-PAK 0 675 P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET P-CH 40V 10.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 40V 10.5A (Ta) 15 mOhm @ 10.5A, 10V 3V @ 250µA 110nC @ 10V 9250pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 150V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete D-PAK 0 375 P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V - - 110W (Tc)
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Infineon Technologies MOSFET P-CH 55V 31A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 450 P-Channel - 55V 31A (Tc) 65 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V 110W (Tc)
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Infineon Technologies MOSFET P-CH 20V 4.3A MICRO-8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1300 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 55 mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15nC @ 5V 1066pF @ 10V 2.5V, 4.5V ±12V 1.25W (Ta)
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 100V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 1 P-Channel - 100V 13A (Tc) 205 mOhm @ 7.8A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 66W (Tc)
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Infineon Technologies MOSFET P-CH 55V 31A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 P-Channel - 55V 31A (Tc) 65 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V 110W (Tc)
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