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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 55V 31A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 300 P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V 3.8W (Ta), 110W (Tc)
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Infineon Technologies MOSFET P-CH 20V 24A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 300 P-Channel - 20V 24A (Tc) 42 mOhm @ 12A, 4.5V 1V @ 250µA 44nC @ 4.5V 1460pF @ 15V 2.5V, 4.5V ±8V 75W (Tc)
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