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Pd - Power Dissipation :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
Factory Pack Quantity :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Packaging Qualification Number of Channels Pd - Power Dissipation Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Package Factory Pack Quantity RoHS
DMTH10H025LK3Q-13
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RFQ
46,520
In-stock
Diodes Incorporated MOSFET MOSFET BVDSS: 61V-100V - 20 V, + 20 V Tape & Reel (TR) AEC-Q101 1 Channel 100 W N-Channel 100 V 51.7 A 22 mOhms 1 V 21 nC TO-252-3 2500 Green available
DMP6110SVTQ-7
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RFQ
45,000
In-stock
Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V - 20 V, + 20 V Tape & Reel (TR) AEC-Q101 1 Channel 1.8 W P-Channel 60 V 7.3 A 105 mOhms 3 V 17.2 nC TSOT-26-6 3000 Green available
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