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Pd - Power Dissipation :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Qualification Number of Channels Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename Package Factory Pack Quantity RoHS
SQ2364EES-T1_GE3
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RFQ
34,600
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Vishay Semiconductors MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id - 8 V, + 8 V         Tape & Reel (TR) AEC-Q101 1 Channel 3 W   N-Channel 60 V 2 A 240 mOhms 460 mV 2.5 nC     SOT-23-3 3000 Green available
SQJ409EP-T1_GE3
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RFQ
9,650
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Vishay Semiconductors MOSFET -40V Vds PowerPAK AEC-Q101 Qualified - 20 V, + 20 V         Tape & Reel (TR) AEC-Q101   68 W   P-Channel 40 V 60 A 7 mOhms 2 V 170 nC     PowerPAK-SO-8-4 3000 Green available
SQJ463EP-T1_GE3
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RFQ
2,402
In-stock
Vishay Semiconductors MOSFET 40V 30A 83W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel AEC-Q101 1 Channel   Si P-Channel - 40 V - 30 A 0.008 Ohms - 2.5 V 150 nC Enhancement TrenchFET      
SQJ463EP-T1-GE3
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RFQ
1,472
In-stock
Vishay Semiconductors MOSFET 40V 30A 83W P-Ch Automotive     PowerPAK-SO-8L-4     Reel AEC-Q101     Si               TrenchFET      
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