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Pd - Power Dissipation :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Packaging Qualification Number of Channels Pd - Power Dissipation Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Rise Time Package Factory Pack Quantity RoHS Minimum Operating
STL92N10F7AG
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RFQ
8,650
In-stock
STMicroelectronics MOSFET Automotive-grade N-channel 100 V, 0.008 Ohm typ 16 A STripF... - 20 V, + 20 V Tape & Reel (TR) AEC-Q101 1 Channel 5 W N-Channel 100 V 16 A 9.5 mOhms 2.5 V 45 nC 32 ns PowerFLAT-5x6-8 3000 Green available  
NVTFS9D6P04M8LTAG
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RFQ
30,000
In-stock
onsemi MOSFET MV8 P INITIAL PROGRAM - 20 V, + 20 V Tape & Reel (TR) AEC-Q101 1 Channel 75 W P-Channel 40 V 64 A 9.5 mOhms 2.4 V 34.6 nC   WDFN-8 3000 Green available - 55 C + 175 C
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