- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- 1 A (1)
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- 8 A (2)
- 8.3 A (1)
- 800 mA (6)
- 9 A (1)
- 9.5 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.05 Ohms (7)
- 1.1 Ohms (1)
- 1.2 Ohms (5)
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- 1.9 Ohms (3)
- 10 Ohms (3)
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- 13 Ohms (2)
- 15 Ohms (2)
- 17 Ohms (2)
- 2 Ohms (2)
- 2.2 Ohms (2)
- 2.7 Ohms (1)
- 2.8 Ohms (1)
- 20 Ohms (3)
- 21 Ohms (3)
- 210 mOhms (1)
- 220 mOhms (4)
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- 3 Ohms (5)
- 3.3 Ohms (2)
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- 30 Ohms (1)
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- 390 mOhms (9)
- 4.8 Ohms (3)
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- 450 mOhms (2)
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- 500 mOhms (3)
- 550 mOhms (2)
- 570 mOhms (2)
- 6 Ohms (3)
- 600 mOhms (3)
- 640 mOhms (1)
- 65 mOhms (1)
- 660 mOhms (2)
- 7 Ohms (2)
- 7.1 Ohms (1)
- 7.5 Ohms (3)
- 700 mOhms (7)
- 750 mOhms (2)
- 760 mOhms (2)
- 8.5 Ohms (1)
- 80 Ohms (3)
- 820 mOhms (1)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 113 nC (1)
- 126 nC (3)
- 130 nC (1)
- 14.6 nC (1)
- 140 nC (3)
- 16 nC (1)
- 190 nC (1)
- 195 nC (4)
- 197 nC (1)
- 200 nC (1)
- 225 nC (3)
- 26 nC (2)
- 264 nC (2)
- 267 nC (1)
- 27 nC (2)
- 270 nC (2)
- 305 nC (2)
- 35 nC (1)
- 39 nC (1)
- 42 nC (3)
- 545 nC (1)
- 56 nC (1)
- 64 nC (3)
- 7.8 nC (3)
- 73 nC (1)
- 8.1 nC (1)
- 80 nC (1)
- 90 nC (2)
- 95 nC (2)
- 97 nC (1)
- Channel Mode :
- Tradename :
147 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,744
In-stock
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Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
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1,071
In-stock
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Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
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849
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
|
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113
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
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100
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
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1,079
In-stock
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STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | |||||
|
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175
In-stock
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IXYS | MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
|
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71
In-stock
|
IXYS | MOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | Enhancement | ||||||
|
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1,197
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
|
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244
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8.3 A | 1.38 Ohms | 113 nC | Enhancement | |||||
|
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125
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | |||||
|
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1,317
In-stock
|
IXYS | MOSFET N-CH MOSFETS 1000V 800MA | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | |||||||
|
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601
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6.5 A | 1.6 Ohms | 73 nC | Enhancement | |||||
|
|
1,027
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 2.7 Ohms | 42 nC | Enhancement | |||||
|
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520
In-stock
|
IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
|
|
1,178
In-stock
|
IXYS | MOSFET 8mAmps 1000V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | 14.6 nC | Depletion | |||||
|
|
133
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
|
|
476
In-stock
|
IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | ||||||
|
|
50
In-stock
|
IXYS | MOSFET 38 Amps 1000V 0.21 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 29 A | 230 mOhms | Enhancement | HyperFET | |||||
|
|
37
In-stock
|
IXYS | MOSFET 22 Amps 1000V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
|
|
57
In-stock
|
IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 37 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
|
|
92,000
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
180
In-stock
|
IXYS | MOSFET 0.1 Amps 1000V 110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Depletion | ||||||
|
|
168
In-stock
|
IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | |||||
|
|
47
In-stock
|
IXYS | MOSFET 12 Amps 1000V 1.3 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.3 Ohms | Enhancement | ||||||
|
|
7
In-stock
|
IXYS | MOSFET 38 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 210 mOhms | Enhancement | HyperFET | |||||
|
|
1,800
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38A | 30 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 220 mOhms | 264 nC | HyperFET | ||||||
|
|
41
In-stock
|
IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | |||||
|
|
76
In-stock
|
IXYS | MOSFET 15 Amps 1000V 0.76 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 760 mOhms | 6.5 V | 97 nC | Enhancement | Polar, HiPerFET | |||
|
|
55
In-stock
|
IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET |
