- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- 10 A (1)
- 100 A (2)
- 105 A (1)
- 11 A (2)
- 11.6 A (1)
- 114 A (1)
- 116 A (1)
- 12 A (1)
- 12.1 A (1)
- 12.5 A (1)
- 120 A (2)
- 13 A (3)
- 13.3 A (1)
- 13.6 A (1)
- 14 A (4)
- 140 A (4)
- 15 A (1)
- 150 A (3)
- 156 A (1)
- 16 A (1)
- 16.6 A (1)
- 160 A (3)
- 161 A (2)
- 17 A (1)
- 18 A (1)
- 19 A (2)
- 190 A (1)
- 20 A (1)
- 200 A (2)
- 21 A (1)
- 210 A (2)
- 22 A (3)
- 23 A (1)
- 235 A (2)
- 24 A (1)
- 240 A (1)
- 260 A (3)
- 27 A (1)
- 30 A (2)
- 33 A (2)
- 35 A (1)
- 4.6 A (1)
- 40 A (3)
- 41 A (1)
- 43 A (1)
- 45 A (1)
- 46 A (2)
- 5.5 A (1)
- 50 A (5)
- 54 A (1)
- 56 A (2)
- 58 A (1)
- 59 A (1)
- 60 A (1)
- 61 A (1)
- 62 A (2)
- 65 A (3)
- 7 A (1)
- 70 A (4)
- 75 A (2)
- 79 A (1)
- 8.3 A (1)
- 8.5 A (1)
- 80 A (13)
- 86 A (3)
- 87 A (1)
- 89 A (1)
- 9 A (1)
- 9.9 A (1)
- 90 A (5)
- 92 A (2)
- Rds On - Drain-Source Resistance :
-
- 1.6 mOhms (1)
- 1.95 mOhms (1)
- 10 mOhms (2)
- 10.5 mOhms (4)
- 11 mOhms (1)
- 11.6 mOhms (1)
- 11.8 mOhms (2)
- 11.9 mOhms (1)
- 12.5 mOhms (5)
- 13 mOhms (3)
- 13.5 mOhms (2)
- 14 mOhms (2)
- 14.6 mOhms (1)
- 14.9 mOhms (1)
- 15 mOhms (1)
- 16 mOhms (2)
- 17.5 mOhms (1)
- 18 mOhms (2)
- 18.2 mOhms (2)
- 2.3 mOhms (2)
- 2.4 mOhms (5)
- 2.5 mOhms (2)
- 2.8 mOhms (2)
- 20 mOhms (2)
- 21 mOhms (1)
- 22 mOhms (1)
- 24 mOhms (2)
- 25 mOhms (1)
- 3.2 mOhms (2)
- 3.3 mOhms (2)
- 3.4 mOhms (2)
- 3.5 mOhms (3)
- 3.6 mOhms (4)
- 3.7 mOhms (1)
- 3.9 mOhms (2)
- 31 mOhms (2)
- 35 mOhms (1)
- 4 mOhms (6)
- 4.1 mOhms (2)
- 4.2 mOhms (2)
- 4.4 mOhms (2)
- 4.5 mOhms (2)
- 4.6 mOhms (2)
- 4.8 mOhms (1)
- 45 mOhms (1)
- 5 mOhms (2)
- 5.2 mOhms (1)
- 5.4 mOhms (1)
- 5.5 mOhms (2)
- 5.9 mOhms (1)
- 50 mOhms (2)
- 59 mOhms (1)
- 6 mOhms (1)
- 6.5 mOhms (1)
- 6.8 mOhms (2)
- 60 mOhms (1)
- 65 mOhms (3)
- 7 mOhms (1)
- 7.1 mOhms (1)
- 7.4 mOhms (1)
- 7.5 mOhms (3)
- 7.8 mOhms (1)
- 70 mOhms (1)
- 8 mOhms (4)
- 8.2 mOhms (2)
- 8.7 mOhms (2)
- 9 mOhms (7)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (5)
- 105 nC (2)
- 11 nC (1)
- 130 nC (2)
- 140 nC (2)
- 15 nC (3)
- 160 nC (5)
- 17 nC (6)
- 17.5 nC (1)
- 18 nC (3)
- 19 nC (1)
- 19.3 nC (2)
- 20 nC (1)
- 209 nC (2)
- 22 nC (2)
- 23 nC (1)
- 24 nC (3)
- 27 nC (3)
- 29 nC (1)
- 30 nC (2)
- 31 nC (2)
- 32 nC (1)
- 33.3 nC (2)
- 34 nC (4)
- 36 nC (1)
- 37 nC (1)
- 38 nC (2)
- 39 nC (3)
- 4.8 nC (1)
- 40 nC (3)
- 41 nC (1)
- 44 nC (1)
- 50.7 nC (2)
- 52 nC (1)
- 54 nC (1)
- 55 nC (1)
- 57 nC (1)
- 6.2 nC (1)
- 7 nC (1)
- 7.2 nC (1)
- 7.6 nC (1)
- 75 nC (2)
- 8.1 nC (1)
- 8.2 nC (1)
- 8.3 nC (1)
- 8.5 nC (2)
- 9 nC (1)
- 9.3 nC (2)
- 9.5 nC (2)
- 9.6 nC (1)
- 9.7 nC (1)
- 93.3 nC (2)
- Tradename :
131 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
12,500
In-stock
|
NXP Semiconductors | MOSFET PSMN022-30PL/SOT78/SIL3P | - 20 V, + 20 V | Tube | 1 Channel | 41 W | N-Channel | 30 V | 30 A | 22 mOhms | 1.3 V | 9 nC | TO-220 | 1000 | Green available | ||||||||||
|
|
4,494
In-stock
|
IR / Infineon | MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 12.5 mOhms | 1 V | 9.3 nC | Enhancement | ||||||||
|
|
3,825
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | ||||||||||||
|
|
2,560
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | |||||||||
|
|
1,540
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||||||
|
|
2,449
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 62A 12mOhm 24nC | 12 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 62 A | 13.5 mOhms | 24 nC | ||||||||||||
|
|
4,624
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | ||||||||
|
|
4,113
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 56 A | 16 mOhms | 22 nC | ||||||||||||
|
|
1,701
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | |||||||||
|
|
3,698
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | |||||||||
|
|
1,797
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||||||
|
|
2,584
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | |||||||||
|
|
2,976
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | ||||||||||
|
|
4,694
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 18 A | 6.8 mOhms | 17 nC | ||||||||||||
|
|
2,477
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | Enhancement | |||||||||
|
|
4,226
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 62A 9mOhm 8nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 62 A | 8.7 mOhms | 1.8 V | 7.6 nC | |||||||||
|
|
748
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.5 mOhms | Enhancement | PowerTrench | |||||||||
|
|
2,368
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||||||
|
|
917
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 10 mOhms | 40 nC | ||||||||||||
|
|
19,880
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 78A 4.8mOhm 15nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 92 A | 6.8 mOhms | 15 nC | ||||||||||||
|
|
2,304
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 14mOhms 17nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 14 mOhms | 17 nC | Enhancement | |||||||||
|
|
752
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | ||||||||||||
|
|
116,100
In-stock
|
STMicroelectronics | MOSFET N-channel 30V, 80A STripFET Mosfet | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.4 mOhms | Enhancement | ||||||||||
|
|
719
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 4 mOhms | Enhancement | ||||||||||
|
|
2,184
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.4 mOhms | Enhancement | OptiMOS | |||||||||
|
|
1,659
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||||||
|
|
1,126
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 161 A | 4 mOhms | 34 nC | ||||||||||||
|
|
3,272
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 4 mOhms | Enhancement | OptiMOS | |||||||||
|
|
1,282
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||||||||
|
|
1,208
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 54 A | 11.6 mOhms | Enhancement | PowerTrench |
