- Mounting Style :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,458
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | |||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||
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1,424
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | ||||||||
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359
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
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4,160
In-stock
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Fairchild Semiconductor | MOSFET 150V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 90 mOhms | Enhancement | QFET | |||||
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666
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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114
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
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380
In-stock
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IR / Infineon | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | ||||||
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85
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | Enhancement | ||||||
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246
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
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14
In-stock
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IXYS | MOSFET PolarP Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | ||||
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384
In-stock
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IXYS | MOSFET -44 Amps -150V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | - 2 V to - 4 V | 175 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | ||||||||
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VIEW | IXYS | MOSFET 88 Amps 150V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 88 A | 22 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET -44 Amps -150V 0.065 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | ||||||||||
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347
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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4
In-stock
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IR / Infineon | MOSFET 20V -150V P-CH FET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | Enhancement |
