- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,073
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | PolarP | ||||
|
83
In-stock
|
IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | ||||||||
|
395
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | |||||||
|
80
In-stock
|
IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | ||||||||
|
88
In-stock
|
IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||||
|
220
In-stock
|
IXYS | MOSFET -11 Amps -500V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 0.122 V | 130 nC | Enhancement | |||||
|
71
In-stock
|
IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | Enhancement | ||||||||
|
114
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | |||||
|
171
In-stock
|
IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | - 5 V | 130 nC | Enhancement | |||||
|
72
In-stock
|
IXYS | MOSFET 11 Amps 500V 0.75 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 5 V | 130 nC | Enhancement | |||||
|
30
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | |||||||
|
30
In-stock
|
IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | Enhancement |