- Mounting Style :
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- Rds On - Drain-Source Resistance :
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- 2.6 mOhms (1)
- 2.8 mOhms (3)
- 2.85 mOhms (1)
- 2.9 mOhms (1)
- 24 mOhms (1)
- 28 mOhms (1)
- 3.4 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (1)
- 4.3 mOhms (2)
- 4.4 mOhms (1)
- 4.9 mOhms (2)
- 5.3 mOhms (1)
- 5.7 mOhms (1)
- 6.2 mOhms (1)
- 6.7 mOhms (2)
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- 730 mOhms (1)
- 8 mOhms (1)
- 8.4 mOhms (2)
- 8.8 mOhms (1)
- 9 mOhms (1)
- Qg - Gate Charge :
47 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,946
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | ||||||
|
1,037
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 223 A | 2.21 mOhms | |||||||||
|
3,815
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | |||||
|
649
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | |||||
|
2,015
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | |||||
|
572
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 89A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 89 A | 2.4 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
|
535
In-stock
|
Fairchild Semiconductor | MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 14 mOhms | Enhancement | UltraFET | ||||||
|
559
In-stock
|
Fairchild Semiconductor | MOSFET Smart Power Module | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 5.3 mOhms | 4.5 V | 65.4 nC | Enhancement | |||||
|
588
In-stock
|
Fairchild Semiconductor | MOSFET 80V 3.2mohm TO220 3L JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 211 A | 2.85 mOhms | 4.5 V | 111 nC | Enhancement | |||||
|
1,389
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8 mOhms | 2 V | 100 nC | Enhancement | |||||
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349
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | |||||
|
786
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.5 mOhms | OptiMOS | |||||||
|
395
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.4 mOhms | 2.2 V | 99 nC | Enhancement | |||||
|
799
In-stock
|
Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | |||||
|
226
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 110 A | 2.8 mOhms | 3 V | 131 nC | Enhancement | PowerTrench | ||||
|
604
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 24 A | 60 mOhms | Enhancement | QFET | ||||||
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197
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | ||||
|
157
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | Enhancement | OptiMOS | ||||||
|
648
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.9 mOhms | 2.2 V | 42 nC | Enhancement | |||||
|
633
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 70 A | 8.4 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 40 A | 10 mOhms | 9 nC | Enhancement | OptiMOS | |||||
|
329
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.7 mOhms | 18 nC | Enhancement | OptiMOS | |||||
|
189
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.8 mOhms | 2.2 V | 133 nC | Enhancement | |||||
|
161
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 75A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 3.7 mOhms | 29 nC | Enhancement | OptiMOS | |||||
|
545
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | ||||
|
31
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 160 A | 7 mOhms | Enhancement | QFET | ||||||
|
63
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 16 mOhms | Enhancement | QFET | ||||||
|
168
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 31nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | Enhancement | ||||||
|
27
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.1 mOhms | 2 V | 167 nC | Enhancement | |||||
|
298
In-stock
|
Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.9 mOhms | 2.6 V | 76 nC | NexFET |