- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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804
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | ||||||||
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973
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | ||||||||
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400
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 280 mOhms | 3 V | 19.5 nC | ||||||
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902
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | |||||
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24
In-stock
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IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 44 Amps 550V 0.11 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 44 A | 120 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 72 Amps 550 V 0.07 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 160 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 180 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 26 Amps 550V 0.23 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 26 A | 230 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 24 Amps 550V 0.270 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 24 A | 270 mOhms | Enhancement | |||||||
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1,023
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.18 Ohm 13A Mdmesh M5 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | 31 nC | Enhancement |