- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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364
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 41mohm | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77 A | 41 mOhms | 2.5 V to 3.5 V | 285 nC | SuperFET II | ||||
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262
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 77 A | 10 mOhms | 65.3 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 30 nC | Enhancement | ||||||
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58
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 77A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 77 A | 9.8 mOhms | 2.1 V | 60 nC | Enhancement | OptiMOS |
