- Mounting Style :
- Package / Case :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
6,060
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3 | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | |||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | 9.5 nC | CoolMOS | ||||
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1,103
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | ||||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 1.8A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS | ||||
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1,474
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 1.8 A | 3 Ohms | Enhancement | CoolMOS |
