- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
589
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
2,865
In-stock
|
IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | |||||||||
|
|
1,658
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 43A 42mOhm 133.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | ||||||||
|
|
614
In-stock
|
Fairchild Semiconductor | MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | Enhancement | UltraFET | |||||
|
|
892
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | |||||
|
|
5,400
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | ||||||||
|
|
2,302
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
|
422
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
|
|
914
In-stock
|
Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
|
723
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
|
|
1,407
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
|
1,414
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 43 A | 18.2 mOhms | 7 nC | Enhancement | |||||
|
|
167
In-stock
|
Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | ||||||
|
|
504
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 9.3 mOhms | 36 nC | Enhancement | OptiMOS | ||||
|
|
905
In-stock
|
IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | |||||||||
|
|
184
In-stock
|
Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
|
VIEW | IXYS | MOSFET 43 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 100 mOhms | Enhancement | HyperFET | |||||
|
|
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | |||||||||
|
|
140
In-stock
|
STMicroelectronics | MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 43 mOhms | 4 V | 178 nC | |||||||
|
|
1,387
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC |