- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,232
In-stock
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Fairchild Semiconductor | MOSFET -60V Single | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 135 mOhms | Enhancement | |||||
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5,000
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 156 mOhms | Enhancement | |||||
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5,500
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | ||||
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2,250
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | IPAK | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement | |||||
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2,263
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 8.5nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 19.7 mOhms | 18 nC | |||||||
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3
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 18nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 8.5 mOhms | 18 nC |
