- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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670
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9.4 A | 220 mOhms | ||||||||||
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273
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9.4 A | 220 mOhms | ||||||||||
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151
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9.4 A | 220 mOhms | 5 V | 31 nC |