- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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3,588
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -40A 60mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | ||||||
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83
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||
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80
In-stock
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IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||
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350
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | ||||||
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3,144
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | Enhancement |
