- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,867
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.9 A | 550 mOhms | Enhancement | |||||||
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1,195
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.308 Ohm 11 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 6.9 A | 340 mOhms | |||||||||||
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646
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.9 A | 550 mOhms | Enhancement | UniFET | ||||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 620 mOhms | 2.5 V | 42 nC | Enhancement | CoolMOS | ||||
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537
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | 42 nC | Enhancement | CoolMOS | |||||
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628
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | Enhancement | CoolMOS | ||||||
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120
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 620 mOhms | 2.5 V | 42 nC | Enhancement | CoolMOS | ||||
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VIEW | IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | Enhancement |