- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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381
In-stock
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IXYS | MOSFET 4500V 1A HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 1 A | 80 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | ||||
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4,539
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 11.5 Ohms | Enhancement | ||||||
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3,894
In-stock
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Fairchild Semiconductor | MOSFET 800V Single | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 20 Ohms | Enhancement | ||||||
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2,756
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | Enhancement | ||||||
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2,062
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-13ohms 1A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 16 Ohms | 3.75 V | 7.7 nC | Enhancement | ||||
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29
In-stock
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IXYS | MOSFET 2500V 1A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1 A | 40 Ohms | 2 V to 4 V | 41 nC | Enhancement | ||||
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66
In-stock
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IXYS | MOSFET 1 Amps 1200V 20 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1 A | 20 Ohms | Enhancement | ||||||
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101
In-stock
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IXYS | MOSFET Polar Power Mosfet 800V 1A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 10 Ohms | 4 V | 9 nC | |||||
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VIEW | IXYS | MOSFET 1 Amps 1200V 20 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1 A | 20 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 14 Ohms | ||||||||||
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VIEW | IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1 A | 15 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 1 Amps 800 V 11 W Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 11 Ohms | Enhancement |