- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,630
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 70 mOhms | 2 V | 70 nC | Enhancement | ||||
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2,518
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement | ||||||
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170
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 60 mOhms | 2 V | 70 nC | Enhancement | |||||
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GET PRICE |
8,700
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 42 A | 56 mOhms | 4 V | 98 nC | Enhancement | MDmesh | ||
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407
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | ||||||||
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477
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement | ||||
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53
In-stock
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IXYS | MOSFET 600V 42A 0.185Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 185 mOhms | 5 V | 78 nC | HyperFET | ||||||
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170
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | Enhancement | |||||
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32
In-stock
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IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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29
In-stock
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IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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20
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
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959
In-stock
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STMicroelectronics | MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | ||||||
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574
In-stock
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STMicroelectronics | MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM) | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | Enhancement | STripFET | |||
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1,583
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 104 mOhms | 190 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
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VIEW | IXYS | MOSFET 42 Amps 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 42 A | 60 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC |
