- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 10.5 mOhms (2)
- 16 mOhms (2)
- 18 mOhms (1)
- 2.1 mOhms (1)
- 2.3 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (1)
- 25 mOhms (1)
- 3.3 mOhms (2)
- 3.7 mOhms (2)
- 33 mOhms (6)
- 4 mOhms (1)
- 4.3 mOhms (1)
- 4.4 mOhms (1)
- 4.5 mOhms (1)
- 41 mOhms (2)
- 49 mOhms (1)
- 56 mOhms (1)
- 6.4 mOhms (1)
- 6.5 mOhms (1)
- 7 mOhms (1)
- 8.4 mOhms (1)
- Qg - Gate Charge :
34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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45
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
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10
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
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11,946
In-stock
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STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | |||||
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402
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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3,132
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | Enhancement | OptiMOS | |||||
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1,797
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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4,000
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 90 A | 18 mOhms | Enhancement | QFET | |||||
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30
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | |||||||
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1,659
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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3,272
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 4 mOhms | Enhancement | OptiMOS | |||||
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18
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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306
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | |||||
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22
In-stock
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IXYS | MOSFET 600V 90A 0.056Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 90 A | 56 mOhms | 5 V | 245 nC | HyperFET | ||||||
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961
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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234
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 8.4 mOhms | Enhancement | ||||||
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63
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 16 mOhms | Enhancement | QFET | |||||
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106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | |||
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100
In-stock
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IXYS | MOSFET 90 Amps 75V 0.01 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 10 mOhms | Enhancement | ||||||
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8,070
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 90 A | 25 mOhms | 2.4 V | 406 nC | Enhancement | ||||
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10
In-stock
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IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | |||
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3,962
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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18
In-stock
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IXYS | MOSFET 500V 100A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 90 A | 49 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 90A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.3 mOhms | OptiMOS | |||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 90 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.5 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 300V 90A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 75 Amps 200V 0.018 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 22 mOhms | 5 V | 240 nC | Enhancement | PolarHT, ISOPLUS247, HiPerFET | |||
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VIEW | IXYS | MOSFET 200V 90A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 22 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 90A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 23 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 90 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 90 A | 16 mOhms | Enhancement |
