- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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378
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 110 mOhms | 3 V | 93 nC | Enhancement | ||||
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232
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS247 | |||
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3,815
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
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437
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 115A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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721
In-stock
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Fairchild Semiconductor | MOSFET UniFET1 300V N-chan MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 70 mOhms | 5 V | 60 nC | UniFET | ||||
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265
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
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340
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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349
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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1,515
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 38 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 38 A | 28 mOhms | Enhancement | ||||||
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10,800
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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217
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | |||||
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7
In-stock
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IXYS | MOSFET 38 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 210 mOhms | Enhancement | HyperFET | |||||
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1,800
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38A | 30 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 220 mOhms | 264 nC | HyperFET | ||||||
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152
In-stock
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Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | |||||||
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20
In-stock
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IXYS | MOSFET 600V 38A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 130 mOhms | Enhancement | HyperFET | |||||
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17
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 60 mOhms | 3.9 V | 250 nC | Enhancement | HiPerFET, COOLMOS, ISOPLUS i4-PAC | |||
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58
In-stock
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Fairchild Semiconductor | MOSFET Single NCh 55V 7mOhm Power MOS UltraFET | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 38 A | 35 mOhms | 3 V | 67 nC | UltraFET | |||||
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20
In-stock
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IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET | |||||
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5
In-stock
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IXYS | MOSFET 38 Amps 1000V 0.25 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 280 mOhms | Enhancement | HyperFET | |||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | |||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET | |||||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 115A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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VIEW | IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET |
