- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,252
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | Enhancement | |||||||
|
2,021
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | Enhancement | ||||||
|
2,103
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | ||||||
|
1,470
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.4 Ohms | 2.1 V | 12 nC | Enhancement | CoolMOS |