- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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96
In-stock
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IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 1.5 Amps 1000V 11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 1 Amps 800 V 11 W Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 11 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 1 Amps 1000V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||||
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924
In-stock
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STMicroelectronics | MOSFET N-Ch 1050V 8Ohm 1.4A SuperMESH3 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 11 Ohms | 4.5 V | 13 nC | Enhancement |
