- Mounting Style :
- Maximum Operating Temperature :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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95
In-stock
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | |||
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130
In-stock
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IXYS | MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA | 20 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 178 A | 11 mOhms | ||||||||
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234
In-stock
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IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 11 mOhms | Enhancement | HyperFET | |||||
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3,698
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | |||||
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654
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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52,500
In-stock
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STMicroelectronics | MOSFET N-channel 75 V .0095 80A STripFet 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | Enhancement | ||||||
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1,483
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 75 A | 11 mOhms | Enhancement | ||||||
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GET PRICE |
144,900
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 72A 11mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 11 mOhms | 80 nC | |||||||
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1,852
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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679
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | |||
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36,200
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 75A 14mOhm 110nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 11 mOhms | 110 nC | ||||||||
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422
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 73A 14mOhm 90nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 90 nC | ||||||||
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320
In-stock
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STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | 117 nC | Enhancement | ||||
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364
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 2 V to 4 V | 80 nC | Enhancement | ||||
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278
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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455
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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707
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | ||||
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231
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 11 mOhms | 43 nC | Enhancement | ||||||
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285
In-stock
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onsemi | MOSFET NFET TO220 100V 76A 13MOH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | |||||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 44A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 44 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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74
In-stock
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IXYS | MOSFET 110Amps 150V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 170A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 11 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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30
In-stock
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IXYS | MOSFET 180 Amps 150V 0.011 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 11 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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19
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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17
In-stock
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IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 11 mOhms | 5 V | 240 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 70V 76A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 70 V | 76 A | 11 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 11 mOhms | 43 nC | Enhancement |