- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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555
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
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436
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
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22
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 600 A | 1.5 mOhms | 1.5 V | 590 nC | Enhancement | HiPerFET | |||
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222
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.5 mOhms | 160 nC | Enhancement | ||||||
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93
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | |||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 340 A | 1.5 mOhms | 160 nC | Enhancement |
